Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

A lateral trench-gate power metal-oxidesemiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of Pbody region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device. Keywords—4H-SiC, lateral, trench-gate, power MOSFET.